ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,396, issued on Dec. 9, was assigned to DENSO Corp. (Kariya, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan), MIRISE Technologies Corp. (Nisshin, Japan) and HAMAMATSU PHOTONICS K.K. (Hamamatsu, Japan).
"Manufacturing method of semiconductor device" was invented by Takashi Ushijima (Nisshin, Japan), Kozo Kato (Nisshin, Japan), Yoshitaka Nagasato (Nisshin, Japan), Masatake Nagaya (Nisshin, Japan), Shinichi Hoshi (Nisshin, Japan), Daisuke Kawaguchi (Hamamatsu, Japan) and Keisuke Hara (Hamamatsu, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes a trench forming step, a laser irradiation step and a ...