US Patent Issued to Deca Technologies USA on Oct. 7 for "Fully molded semiconductor structure with through silicon via (TSV) vertical interconnects" (Washington, Minnesota, Arizona Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,438,065, issued on Oct. 7, was assigned to Deca Technologies USA Inc. (Tempe, Ariz.).

"Fully molded semiconductor structure with through silicon via (TSV) vertical interconnects" was invented by Robin Davis (Vancouver, Wash.), Timothy L. Olson (Phoenix), Craig Bishop (Scottsdale, Ariz.) and Clifford Sandstrom (Richfield, Minn.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of making a semiconductor device may include providing a large semiconductor die comprising conductive interconnects with a first encapsulant disposed over four side surfaces of the large semiconductor die, over the active surface of the large semiconductor die, and around the...