ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,433,005, issued on Sept. 30, was assigned to DB HiTek Co. Ltd. (Bucheon-si, South Korea).
"RF switch device" was invented by Ja Geon Koo (Eumseong-gun, South Korea), Jin Hyo Jung (Suwon-si, South Korea), Hae Taek Kim (Bucheon-si, South Korea), Hyun Joong Lee (Daejeon, South Korea) and Jung Ah Kim (Dongducheon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is an RF switch device and a method of manufacturing the same and, more particularly, to an RF switch device that improves the on-resistance (Ron) of the RF switch by including an integral or integrally formed P diode. The RF switch device includes a first active region on a f...