US Patent Issued to DB HiTek on Sept. 30 for "Power semiconductor device and manufacturing method thereof" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,996, issued on Sept. 30, was assigned to DB HiTek Co. Ltd. (Bucheon-si, South Korea).

"Power semiconductor device and manufacturing method thereof" was invented by Ji Houn Jung (Seoul, South Korea), Dae Il Kim (Cheongju-si, South Korea), Han Seok Ko (Seoul, South Korea) and Ung Bi Son (Bucheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a power semiconductor device and a manufacturing method thereof and, more particularly, a power semiconductor device and a manufacturing method thereof seeking to capture electrons trapped on one side of a transistor during transistor operation, prevent current collapse effects, and i...