ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,807, issued on Oct. 28, was assigned to DB HiTek Co. Ltd. (Bucheon-si, South Korea).

"SPAD ESD protection device and manufacturing method thereof" was invented by Jong Min Kim (Seoul, South Korea) and Young Sang Son (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are an ESD protection device to mitigate performance degradation due to operational instability by ensuring protection against ESD events and stress. The ESD protection device includes an N-type buried layer including a first dopant type in a semiconductor substrate, a deep well (DNW) including a first dopant type on the N-type buried layer, a first doped region...