ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,309, issued on Nov. 11, was assigned to DB HiTek Co. Ltd. (Bucheon-si, South Korea).
"High voltage semiconductor device and method of manufacturing same" was invented by Nam Kyu Kim (Yongin-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a high voltage semiconductor device and a method of manufacturing the same and, more particularly, a high voltage semiconductor device and a method of manufacturing the same seeking to shorten a path of excess carriers to a body contact and improve breakdown voltage (BV) characteristics accordingly, in addition to minimizing a separation distance between adjacent gate electrodes and impr...