US Patent Issued to DB HiTek on May 6 for "Superjunction semiconductor device with different effective epitaxial layer thicknesses" (South Korean Inventors)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,295,159, issued on May 6, was assigned to DB HiTek Co. Ltd. (Bucheon-si, South Korea).

"Superjunction semiconductor device with different effective epitaxial layer thicknesses" was invented by Won Kook Cho (Bucheon-si, South Korea) and Myeong Bum Pyun (Incheon, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A superjunction semiconductor device with an epitaxial layer having different effective thicknesses and a method of manufacturing the same are disclosed. The superjunction semiconductor device includes an epitaxial layer having different thicknesses in a cell region and a ring region to decrease a breakdown voltage of the cell region rela...