ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,563, issued on March 18, was assigned to DB HiTek Co. Ltd. (Bucheon-si, South Korea).

"Superjunction semiconductor device having reduced source area" was invented by Ji Eun Lee (Bucheon-si, South Korea), Myeong Bum Pyun (Incheon, South Korea) and Yong Sin Han (Jeonju-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A superjunction semiconductor device having a reduced source area and a method of manufacturing the same and, more particularly, to a semiconductor device and a method of manufacturing the same, in which the semiconductor device realizes a reduction in the area of a source in a body region to reduce the current during a sho...