US Patent Issued to DB HiTek on July 1 for "High voltage semiconductor device and method of manufacturing same" (South Korean Inventor)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,397, issued on July 1, was assigned to DB HiTek Co. Ltd. (Bucheon-si, South Korea).

"High voltage semiconductor device and method of manufacturing same" was invented by Byung Hwa Lee (Gamgok-myeon, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a high voltage semiconductor device and a method of manufacturing the same and, more particularly, to a high voltage semiconductor device and a method of manufacturing the same that enables an improvement in the breakdown voltage relative to the on-resistance by forming a top region in or at the surface of the substrate when the device includes a field plate adjacent to a gate electrod...