US Patent Issued to DB HiTek on Dec. 9 for "Power semiconductor device and manufacturing method thereof" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,567, issued on Dec. 9, was assigned to DB HiTek Co. Ltd. (Bucheon-si, South Korea).

"Power semiconductor device and manufacturing method thereof" was invented by Ji Houn Jung (Seoul, South Korea), Dae Il Kim (Cheongji-si, South Korea), Han Seok Ko (Seoul, South Korea) and Ung Bi Son (Bucheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor device and a method of manufacturing the power semiconductor device are disclosed. The power semiconductor device includes an isolation region at or in a bather layer in contact with or adjacent to a drain electrode to reduce or prevent current collapse between a gate electrode a...