ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,461,174, issued on Nov. 4, was assigned to DALIAN UNIVERSITY OF TECHNOLOGY (Dalian, China).
"Cross-shaped high-temperature three-dimensional hall sensor and preparation method thereof" was invented by Huolin Huang (Dalian, China) and Kaiming Ma (Dalian, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A cross-shaped high-temperature three-dimensional Hall sensor includes the X column, the Y column and the Z column all made of third-generation semiconductor materials. The X column, the Y column and the Z column are vertically connected to each other. An electrode C1 and an electrode C2 are respectively arranged at two ends of the Z column. An electrod...