US Patent Issued to DAEJEON UNIVERSITY INDUSTRY-UNIVERSITY COOPERATION FOUNDATION on Nov. 25 for "Method and system for removing L-FC in plasma etching process" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,639, issued on Nov. 25, was assigned to DAEJEON UNIVERSITY INDUSTRY-UNIVERSITY COOPERATION FOUNDATION (Daejeon, South Korea).

"Method and system for removing L-FC in plasma etching process" was invented by Kyong Nam Kim (Suwon-si, South Korea), Jun Young Park (Goyang-si, South Korea) and Seok Jun Kim (Daejeon, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Proposed are a method and a system for removing L-FC in a plasma etching process, in which L-FC, which is condensed on a wafer, an electrode, a substrate, a head, or the like, is removed by using infrared or ultraviolet rays in a plasma etching process using an L-FC precursor."

The pa...