US Patent Issued to CSMC TECHNOLOGIES FAB2 on Nov. 4 for "Semiconductor memory including a current comparison readout circuit" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,462,882, issued on Nov. 4, was assigned to CSMC TECHNOLOGIES FAB2 Co. LTD. (Jiangsu, China).

"Semiconductor memory including a current comparison readout circuit" was invented by Ming Gu (Wuxi, China), Hao Wang (Wuxi, China), Shuming Guo (Wuxi, China), Youhui Li (Wuxi, China), Bin Chen (Wuxi, China) and Yongqiang Hu (Wuxi, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory comprising: a comparison readout circuit comprising a first port configured to receive an electric signal of a read memory unit and a second port configured to receive a reference electric signal, the comparison readout circuit being configured to compare the e...