US Patent Issued to CSMC TECHNOLOGIES FAB2 on March 11 for "Laterally diffused metal oxide semiconductor device and manufacturing method therefor" (Chinese Inventors)

ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,645, issued on March 11, was assigned to CSMC TECHNOLOGIES FAB2 Co. LTD. (Jiangsu, China).

"Laterally diffused metal oxide semiconductor device and manufacturing method therefor" was invented by Zhili Zhang (Jiangsu, China), Jingchuan Zhao (Jiangsu, China) and Sen Zhang (Jiangsu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A laterally diffused metal-oxide-semiconductor (LDMOS) device and a method of manufacturing the LDMOS device are disclosed. The method includes: obtaining a substrate with a drift region formed thereon, the drift region having a first conductivity type and disposed on the substrate of a second conductivity type; etching ...