US Patent Issued to CSMC TECHNOLOGIES FAB2 on June 10 for "Semiconductor device and method for manufacturing semiconductor device" (Chinese Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,899, issued on June 10, was assigned to CSMC TECHNOLOGIES FAB2 Co. LTD. (Wuxi, China).

"Semiconductor device and method for manufacturing semiconductor device" was invented by Dong Fang (Wuxi, China) and Zheng Bian (Wuxi, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application relates to a semiconductor device, comprising a substrate, with a body region being formed on the substrate, and a well region being formed in the body region; and further comprising trenches penetrating through the well region and the body region and extending to the substrate, wherein a first polysilicon body and a second polysilicon body, which are isol...