US Patent Issued to CSMC TECHNOLOGIES FAB2 on April 8 for "Laterally diffused metal oxide semiconductor device and method for preparing the same" (Chinese Inventors)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,272,749, issued on April 8, was assigned to CSMC TECHNOLOGIES FAB2 Co. LTD. (Wuxi, China).

"Laterally diffused metal oxide semiconductor device and method for preparing the same" was invented by Jingchuan Zhao (Wuxi, China), Zhili Zhang (Wuxi, China) and Sen Zhang (Wuxi, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a laterally diffused metal oxide semiconductor device and a method for preparing the same. The device includes a substrate (101) of a first conductivity type, a drift region (102) of a second conductivity type, a longitudinal floating field plate array and a plurality of implantation regions (103) of the first conductivi...