US Patent Issued to CRYSTAL IS on Feb. 18 for "Aluminum nitride single crystals having large crystal augmentation parameters" (American, Japanese Inventors)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,227,873, issued on Feb. 18, was assigned to CRYSTAL IS INC. (Green Island, N.Y.).

"Aluminum nitride single crystals having large crystal augmentation parameters" was invented by Robert T. Bondokov (Latham, N.Y.), Thomas Miebach (Malta, N.Y.), Jianfeng Chen (Clifton Park, N.Y.), Takashi Suzuki (Fuji, Japan) and Leo J. Schowalter (Latham, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "In various embodiments, aluminum nitride single crystals have large crystal augmentation parameters and may therefore be suitable for the fabrication of numerous, large single-crystal aluminum nitride substrates having high crystalline quality. The aluminum nitride sing...