US Patent Issued to Cornell University on March 4 for "Vertical gallium oxide (GA2O3) power FETs" (New York Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,921, issued on March 4, was assigned to Cornell University (Ithaca, N.Y.).

"Vertical gallium oxide (GA2O3) power FETs" was invented by Zongyang Hu (Ithaca, N.Y.), Kazuki Nomoto (Ithaca, N.Y.), Grace Huili Xing (Ithaca, N.Y.), Debdeep Jena (Ithaca, N.Y.) and Wenshen Li (Ithaca, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical gallium oxide (Ga2O3) device having a substrate, an n-type Ga2O3 drift layer on the substrate, an, n-type semiconducting channel extending from the n-type Ga2O3 drift layer, the channel being one of fin-shaped or nanowire shaped, an n-type source layer disposed on the channel; the source layer has a higher doping c...