US Patent Issued to Cornell University on June 10 for "Micron scale tin oxide-based semiconductor devices" (New York Inventor)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,906, issued on June 10, was assigned to Cornell University (Ithaca, N.Y.).

"Micron scale tin oxide-based semiconductor devices" was invented by Jisung Park (Ithaca, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Micron scale tin oxide-based semiconductor devices are provided. Reactive-ion etching is used to produce a micron-scale electronic device using semiconductor films with tin oxides, such as barium stannate (BaSnO3). The electronic devices produced with this approach have high mobility, drain current, and on-off ratio without adversely affecting qualities of the tin oxide semiconductor, such as resistivity, electron or hole mobility, and ...