US Patent Issued to Cornell University on July 15 for "Bottom tunnel junction light-emitting field-effect transistors" (New York Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,364,060, issued on July 15, was assigned to Cornell University (Ithaca, N.Y.).

"Bottom tunnel junction light-emitting field-effect transistors" was invented by Shyam Bharadwaj (Ithaca, N.Y.), Kevin Lee (Ithaca, N.Y.), Kazuki Nomoto (Ithaca, N.Y.), Austin Hickman (Hickman, N.Y.), Len van Deurzen (Ithaca, N.Y.), Huili Grace Xing (Ithaca, N.Y.), Debdeep Jena (Ithaca, N.Y.) and Vladimir Protasenko (Ithaca, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for achieving voltage-controlled gate-modulated light emission using monolithic integration of fin- and nanowire- n-i-n vertical FETs with bottom-tunnel junction planar InGaN LEDs is described. ...