US Patent Issued to Cornell University on April 15 for "Patterning electronic devices using reactive-ion etching of tin oxides" (New York Inventor)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,279,450, issued on April 15, was assigned to Cornell University (Ithaca, N.Y.).

"Patterning electronic devices using reactive-ion etching of tin oxides" was invented by Jisung Park (Ithaca, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Patterning electronic devices using reactive-ion etching of tin oxides is provided. Reactive-ion etching facilitates patterning of tin oxides, such as barium stannate (BaSnO3), at a consistent and controllable etch rate. The reactive-ion etching approach described herein facilitates photolithographic patterning of tin oxide-based semiconductors to produce electronic devices, such as thin-film transistors (TFTs). This...