US Patent Issued to CoolCAD Electronics on Jan. 13 for "Fabrication of silicon carbide integrated power MOSFETs on a single substrate" (Maryland Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,055, issued on Jan. 13, was assigned to CoolCAD Electronics LLC (College Park, Md.).

"Fabrication of silicon carbide integrated power MOSFETs on a single substrate" was invented by Neil Goldsman (Takoma Park, Md.), Akin Akturk (Gaithersburg, Md.), Zeynep Dilli (Rockville, Md.), Mitchell Adrian Gross (Baltimore), Usama Khalid (Hanover, Md.) and Christopher James Darmody (Laurel, Md.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Fabrication method for a SiC integrated circuit which allows multiple power MOSFETs or LDMOSs to exist in the same piece of semiconductor substrate and still function as individual devices which form the components of a given...