US Patent Issued to Commissariat a l'Energie Atomique et aux Energies on July 29 for "Process for fabricating a semiconductor diode via wet and dry etches" (French Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,423, issued on July 29, was assigned to Commissariat a l'Energie Atomique et aux Energies (Alternatives Paris, France).

"Process for fabricating a semiconductor diode via wet and dry etches" was invented by Bertrand Szelag (Grenoble, France) and Laetitia Adelmini (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "The invention relates to a process for fabricating a semiconductor diode (1) via transfer of a semiconductor stack (20) then local etching to form a semiconductor pad (30), the production of the semiconductor pad (30) comprising a plurality of sequences comprising a dry etch that leaves a residual segment (23.1; 22.1), formati...