US Patent Issued to Commissariat a l'Energie Atomique et aux Energies Alternatives on Oct. 28 for "Transistor" (French Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,789, issued on Oct. 28, was assigned to Commissariat a l'Energie Atomique et aux Energies Alternatives (Paris).

"Transistor" was invented by Blend Mohamad (Grenoble, France) and Rene Escoffier (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor comprising a gallium nitride layer having a first gate electrode partially penetrating into it, having: a first side coated with a first thickness of a first insulating material and of a second insulating material; and with a second thickness of a conductive material; and a bottom coated with a third thickness, smaller than the first thickness, of the first insulating material."

The...