US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES on Oct. 21 for "Diode comprising at least two passivation layers, in particular formed of dielectrics, which are locally stacked to optimise passivation" (French Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,216, issued on Oct. 21, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris).

"Diode comprising at least two passivation layers, in particular formed of dielectrics, which are locally stacked to optimise passivation" was invented by David Vaufrey (Grenoble, France) and Corentin Le Maoult (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A diode includes a stack of semiconductor layers and an active area arranged within the stack. The stack includes a lateral surface. The diode includes a first passivation layer and a second passivation layer, the first passivation layer being in contact with the later...