US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES on Nov. 18 for "Quantum device integrating a buried metal electrode" (French Inventor)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,475,395, issued on Nov. 18, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris).

"Quantum device integrating a buried metal electrode" was invented by Heimanu Niebojewski (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A Qbit spin quantum device includes juxtaposed first and second semiconducting portions, the semiconducting portions being formed in a surface layer of a semiconductor-on-insulator type substrate and disposed on an insulating layer of the substrate, the substrate being fitted with a semiconducting support layer such that the insulating layer is arranged between the support layer and the ...