ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,785, issued on Nov. 18, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris).
"Quantum device and method for producing the same" was invented by Nicolas Posseme (Grenoble, France), Louis Hutin (Grenoble, France), Cyrille Le Royer (Grenoble, France), Francois Lefloch (Grenoble, France), Fabrice Nemouchi (Grenoble, France) and Maud Vinet (Grenoble, France).
According to the abstract* released by the U.S. Patent & Trademark Office: "A quantum device includes a transistor pattern carried by a substrate, the transistor pattern having, in a stack, a gate dielectric and a superconducting gate on the gate dielectric. The superconducting gate has a base, ...