US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES on June 24 for "Microelectronic device with two field-effect transistors" (French Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,617, issued on June 24, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris).

"Microelectronic device with two field-effect transistors" was invented by Sylvain Barraud (Grenoble, France) and Joris Lacord (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A microelectronic device includes a field-effect n-MOS transistor, a first N-doped zone, constituting one from among the drain and the source of the n-MOS transistor and a second N-doped zone, constituting the other from among the drain and the source of the n-MOS transistor. The device further includes a field-effect p-MOS transistor, a first P-doped...