US Patent Issued to Commissariat a l'Energie Atomique et aux Energies Alternatives on June 10 for "Semiconductor substrate polishing method" (French Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,327,719, issued on June 10, was assigned to Commissariat a l'Energie Atomique et aux Energies Alternatives (Paris).

"Semiconductor substrate polishing method" was invented by Shay Reboh (Grenoble, France), Jean-Michel Hartmann (Grenoble, France), Frederic Mazen (Grenoble, France) and Frederic Milesi (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of polishing a semiconductor substrate, including: a) a step of multiple implantations of ions from an upper surface of the substrate, to modify the material of an upper portion of the substrate, the multiple implantation step comprising a plurality of successive implantations under di...