US Patent Issued to Commissariat a l'Energie Atomique et aux Energies Alternatives on July 15 for "Process for fabricating a photonics-on-silicon optoelectronic system comprising an optical device coupled to an integrated photonic circuit" (French Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,360,311, issued on July 15, was assigned to Commissariat a l'Energie Atomique et aux Energies Alternatives (Paris).

"Process for fabricating a photonics-on-silicon optoelectronic system comprising an optical device coupled to an integrated photonic circuit" was invented by Karim Hassan (Grenoble, France), Quentin Wilmart (Grenoble, France) and Bertrand Szelag (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A process for fabricating an optoelectronic system having an optical device coupled to an integrated photonic circuit includes producing a lower waveguide from the thin single-crystal-silicon layer of a first SOI substrate, then joini...