US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES on Jan. 20 for "Method for manufacturing self-aligned exchange gates and associated semiconducting device" (French Inventor)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,521, issued on Jan. 20, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris).

"Method for manufacturing self-aligned exchange gates and associated semiconducting device" was invented by Heimanu Niebojewski (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method manufactures exchange gates from a starting structure including a substrate and, disposed on the substrate, a plurality of gate stacks, each gate stack including, a layer of a conductive or semiconductor material and a layer of a hard mask."

The patent was filed on Jan. 18, 2022, under Application No. 17/577,769.

*For further information, ...