US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES on Jan. 13 for "Method for transferring a thin layer onto a receiver substrate including cavities and a region devoid of cavities" (French Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,489, issued on Jan. 13, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris).

"Method for transferring a thin layer onto a receiver substrate including cavities and a region devoid of cavities" was invented by Thierry Salvetat (Grenoble, France) and Guillaume Berre (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for transferring a semiconductor layer from a donor substrate having a weakening plane to a receiver substrate having comprising a bonding face that has open cavities includes putting the donor substrate and the bonding face of the receiver substrate in contact, producing an assembl...