US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES on Jan. 13 for "Method for etching a three-dimensional dielectric layer" (French Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,462, issued on Jan. 13, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris).

"Method for etching a three-dimensional dielectric layer" was invented by Nicolas Posseme (Grenoble, France) and Valentin Bacquie (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for etching a dielectric layer covering a top and a flank of a three-dimensional structure, this method including a first etching of the dielectric layer, including a first fluorine based compound, a second compound taken from SiwCl(2w+2) and SiwF(2w+2), oxygen, this first etching being carried out to form a first protective layer on the t...