US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES on Feb. 10 for "Semiconductor device and associated manufacturing method" (French Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,404, issued on Feb. 10, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris).

"Semiconductor device and associated manufacturing method" was invented by Cyrille Le Royer (Grenoble, France), Louis Hutin (Grenoble, France), Fabrice Nemouchi (Grenoble, France) and Nicolas Posseme (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate; a plurality of gate stacks situated horizontally following one another on the substrate, each gate stack including a layer of a dielectric material in contact with the substrate and a layer of a conductive material on the layer of diel...