US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES on Feb. 10 for "Method for producing an individualization zone of an integrated circuit" (French Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,743, issued on Feb. 10, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris).

"Method for producing an individualization zone of an integrated circuit" was invented by Stefan Landis (Grenoble, France) and Yorrick Exbrayat (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for producing an individualization zone of a microelectronic chip having a first and a second electrical track level and an interconnection level including vias, includes providing the first level and a dielectric layer, forming an etching mask on the dielectric layer, randomly depositing particles on the etching mask, and fo...