US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES on Dec. 9 for "Process for manufacturing a low-noise photodetector device in a CdHgTe substrate" (French Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,638, issued on Dec. 9, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris).

"Process for manufacturing a low-noise photodetector device in a CdHgTe substrate" was invented by Francois Boulard (Grenoble, France), Jean-Paul Chamonal (Grenoble, France), Clement Lobre (Grenoble, France) and Florent Rochette (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a photodetection device, which includes the following steps: making a cadmium-rich structured coating, over a substrate of CdxHg1-xTe, and using a first etching mask; etching to enlarge the through openings of the first etchin...