US Patent Issued to Commissariat a l'Energie Atomique et aux Energies Alternatives on Dec. 16 for "Electronic device comprising transistors" (French Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,643, issued on Dec. 16, was assigned to Commissariat a l'Energie Atomique et aux Energies Alternatives (Paris).

"Electronic device comprising transistors" was invented by Rene Escoffier (Grenoble, France) and Blend Mohamad (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electronic device including semiconductor region located on a gallium nitride layer, two electrodes, located on either side of and insulated from the semiconductor region, the electrodes partially penetrating into the gallium nitride layer, and two lateral MOS transistors formed inside and on top of the semiconductor region."

The patent was filed on May 27, 2022,...