US Patent Issued to Commissariat a l'Energie Atomique et aux Energies Alternatives on Aug. 5 for "Method for manufacturing resistive memory cells" (French Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,845, issued on Aug. 5, was assigned to Commissariat a l'Energie Atomique et aux Energies Alternatives (Paris).

"Method for manufacturing resistive memory cells" was invented by Nicolas Guillaume (Grenoble, France), Serge Blonkowski (Grenoble, France), Christelle Charpin-Nicolle (Grenoble, France) and Eric Jalaguier (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "This method comprises the following steps: a) providing a stack successively comprising: a substrate; a first electrode; a first dielectric layer, having a first electrical strength; a second metal electrode; a second dielectric layer, having a second dielectric strength that...