ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,394,464, issued on Aug. 19, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris).

"Hybrid FeRAM/OxRAM data storage circuit" was invented by Michele Martemucci (Grenoble, France), Francois Rummens (Grenoble, France), Elisa Vianello (Grenoble, France) and Tifenn Hirtzlin (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A data storage circuit includes a first memory array comprising a plurality of FeRAM memory units; a second memory array comprising a plurality of OxRAM memory units; each of the first and second memory arrays comprising: a plurality of word lines, a plurality of source lines and a plurality...