US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES on Aug. 12 for "Method for manufacturing a transistor with a gate-all-around structure" (French Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,644, issued on Aug. 12, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris).

"Method for manufacturing a transistor with a gate-all-around structure" was invented by Cyrille Le Royer (Grenoble, France), Joel Kanyandekwe (Grenoble, France) and Sylvain Barraud (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a pFET transistor, the method for manufacturing the transistor including providing a base structure comprising a silicon channel and a gate structure, the gate structure surrounding the channel leaving two flanks of the channel free; growing a first layer made from silic...