ALEXANDRIA, Va., July 30 -- United States Patent no. 12,374,397, issued on July 29, was assigned to Commissariat a l'energie atomique et aux energies alternatives (Paris), Universite d'Aix-Marseille (Marseilles, France) and Centre national de la recherche scientifique (Paris).

"Memory cell, electronic circuit comprising such cells, related programming method and multiplication and accumulation method" was invented by Djohan Bonnet (Grenoble, France), Tifenn Hirtzlin (Grenoble, France), Elisa Vianello (Grenoble, France), Eduardo Esmanhotto (Grenoble, France) and Jean-Michel Portal (Saint Savournin, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory cell, includes first and second main terminals, a...