US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, THALES on Oct. 21 for "High electron mobility transistor with reduced access resistance and method for manufacturing a high electron mobility transistor with reduced access resistance" (French Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,113, issued on Oct. 21, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris) and THALES (Courbevoie, France).

"High electron mobility transistor with reduced access resistance and method for manufacturing a high electron mobility transistor with reduced access resistance" was invented by Erwan Morvan (Grenoble, France), Jerome Biscarrat (Grenoble, France) and Yveline Gobil (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A high electron mobility transistor includes a stack of layers including a passivation layer and a heterojunction including a first semiconductor layer, a second semiconductor layer ...