US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, THALES on July 8 for "Method for on-silicon integration of a component III-V and on-silicon integrated component III-V" (French Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,353,068, issued on July 8, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris) and THALES (Courbevoie, France).

"Method for on-silicon integration of a component III-V and on-silicon integrated component III-V" was invented by Delphine Neel (Palaiseau, France) and David Bitauld (Palaiseau, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for on-silicon integration of a III-V-based material component includes providing a first substrate having a silicon-based optical layer including a waveguide, transferring a second substrate of III-V-based material on the optical layer, and forming the III-V component fro...