ALEXANDRIA, Va., March 19 -- United States Patent no. 12,252,807, issued on March 18, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris) and CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (Paris).

"Process for obtaining a nitride layer" was invented by Guy Feuillet (Saint-Martin d'Uriage, France), Blandine Alloing (Valbonne, France), Virginie Brandli (Valbonne, France), Benoit Mathieu (Grenoble, France) and Jesus Zuniga Perez (Biot, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A process for obtaining a nitride (N) layer preferably obtained from at least one of gallium (Ga), indium (In) and aluminium (Al), may include: on a stack including a substrate and at least th...