ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,976, issued on June 10, was assigned to COMMISARIAT A L'ENERGIE ATOMIQUE AUX ENERGIES ALTERNATIVES (Paris), CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (Paris) and UNIVERSITE GRENOBLE ALPES (Saint Martin-d'heres, France).
"Light-emitting diode comprising a hybrid structure formed of layers and nanowire" was invented by Bruno Daudin (Grenoble, France), Gwenole Jacopin (Grenoble, France) and Julien Pernot (Grenoble, France).
According to the abstract* released by the U.S. Patent & Trademark Office: "A light-emitting diode is provided, including: a first layer of n-doped AlX1Ga(1-X1-Y1)InY1N, with X1less than0 and X1+Y1less than equal to1; a second layer of p-doped AlX2Ga(1-X2-Y2)I...