US Patent Issued to City University of Hong Kong on Oct. 7 for "Controlled heating rate baking protocol for the synthesis of bismuth vanadate thin films" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,437,933, issued on Oct. 7, was assigned to City University of Hong Kong (Kowloon, Hong Kong).

"Controlled heating rate baking protocol for the synthesis of bismuth vanadate thin films" was invented by Ruiqin Zhang (Kowloon, Hong Kong) and Rafiqat Ui Rasool (Kowloon, Hong Kong).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a film on a substrate and a method for controlling the heating rate of a plurality of nanoparticles to transform the plurality of nanoparticles into a plurality of nanorods and nano-cone structures includes the steps of providing a sol precursor, providing a substrate, depositing the sol precursor onto the subst...