US Patent Issued to CITY UNIVERSITY OF HONG KONG on May 20 for "Methods of producing single-layer transition metal selenide" (Chinese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,305,277, issued on May 20, was assigned to CITY UNIVERSITY OF HONG KONG (Kowloon, Hong Kong).

"Methods of producing single-layer transition metal selenide" was invented by Thuc Hue Ly (Kowloon, Hong Kong), Ping Man (Kowloon, Hong Kong) and Ka Ho Leung (Kowloon, Hong Kong).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein is a method of producing a substrate having a single-layer transition metal selenide (TMS) nanoflakes deposited thereon. The method is characterized in not using hydrogen as a reducing agent during the deposition of monolayer TMS nanoflakes on the substrate. Such substrates may serve as an optic, an electronic device, a mec...