ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,459, issued on Feb. 10, was assigned to Cisco Technology Inc. (San Jose, Calif.).

"Integrated germanium photodiode with self-aligned implant and electrical contact" was invented by Long Chen (Marlboro, Mass.) and Qianfan Xu (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A photodiode device includes a base layer having a first intermediately doped region and a heavily doped region, a dielectric layer disposed over the base layer, a light absorptive material disposed in the dielectric layer, a first electrode, a coating layer, and a second electrode disposed in the dielectric layer and in communication with the heavily doped region. ...