US Patent Issued to Ciena on Nov. 11 for "Semiconductor device with selective area epitaxy growth utilizing a mask to suppress or enhance growth at the edges" (Canadian Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,470,045, issued on Nov. 11, was assigned to Ciena Corp. (Hanover, Md.).

"Semiconductor device with selective area epitaxy growth utilizing a mask to suppress or enhance growth at the edges" was invented by David Alexander Macquistan (Ottawa) and Kelvin Prosyk (Luskville, Canada).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes obtaining a semiconductor wafer having an orientation in a plane; depositing one or more masks to a semiconductor wafer, wherein each mask is configured to cover a portion of the semiconductor wafer, and wherein each mask includes a perimeter having multiple sides that are substantially aligned along a preferred cry...