US Patent Issued to CHONGQING KONKA PHOTOELECTRIC TECHNOLOGY RESEARCH INSTITUTE on Nov. 25 for "Method for growing electron-blocking layer, epitaxial layer, and light-emitting diode chip" (Chinese Inventor)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,341, issued on Nov. 25, was assigned to CHONGQING KONKA PHOTOELECTRIC TECHNOLOGY RESEARCH INSTITUTE Co. LTD. (Chongqing, China).

"Method for growing electron-blocking layer, epitaxial layer, and light-emitting diode chip" was invented by ZhaoBin Huang (Chongqing, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for growing an electron-blocking layer, an epitaxial layer, and an LED chip are provided in the present disclosure. The epitaxial layer includes an N-type semiconductor layer, an active layer, a P-type semiconductor layer, and an electron-blocking layer. The electron-blocking layer is disposed between the active layer and the P-t...